The M36L0R7050T4ZSP-S1 is a high-performance memory solution from the renowned semiconductor manufacturer STMicroelectronics. This product is designed to cater to the demanding needs of modern electronic applications, providing robust storage capabilities with a combination of NOR Flash and PSRAM in a Multi-Chip Package (MCP).

Key Features

• Memory Capacity: The device integrates a 64Mbit (4M x16) NOR Flash memory and a 32Mbit (2M x16) Pseudo Static RAM (PSRAM), offering a well-balanced combination for both code storage and data buffering.
• Package: Housed in a compact TFBGA88 (Thin Fine Ball Grid Array) package, the M36L0R7050T4ZSP-S1 is designed for space-constrained applications, providing a high-density memory solution without compromising on performance.
• Operating Voltage: The device supports a wide range of operating voltages from 2.7V to 3.6V, making it versatile for use in various system designs and ensuring compatibility with a broad spectrum of other components.
• Access Speed: NOR Flash memory offers fast random access times, which is critical for applications that require quick boot or frequent code updates. PSRAM provides low-latency access, ideal for temporary data storage during application processing.
• Temperature Range: The M36L0R7050T4ZSP-S1 operates over an industrial temperature range, making it suitable for applications that are exposed to extreme conditions.

Applications

This memory solution is ideal for a variety of applications, including but not limited to:

• Automotive systems
• Industrial control units
• Telecommunication infrastructure
• High-end embedded systems

Reliability and Support

STMicroelectronics is known for its commitment to quality and reliability. The M36L0R7050T4ZSP-S1 is backed by rigorous testing and validation processes, ensuring that it meets the high standards expected by industry professionals. Additionally, STMicroelectronics provides comprehensive technical support and documentation, making integration and development with the M36L0R7050T4ZSP-S1 as seamless as possible.