STMicroelectronics M24C64-WMN6T EEPROM
The M24C64-WMN6T is a 64-Kbit serial EEPROM (Electrically Erasable Programmable Read-Only Memory) device from STMicroelectronics, designed with high reliability and low power consumption in mind. This EEPROM operates on a supply voltage range of 2.5V to 5.5V, making it suitable for a wide array of applications, from industrial to consumer electronics.
With an organization of 8192 x 8 bits, the M24C64-WMN6T allows for a significant amount of data storage. The device communicates via a two-wire I2C serial interface, supporting both the 100 kHz (standard mode) and 400 kHz (fast mode) communication speeds. This interface is widely used in the industry, ensuring compatibility with a broad range of microcontrollers and processors.
One of the key features of this EEPROM is the Write Control input, which provides hardware protection of the entire memory content. This is particularly important in applications where data integrity is critical, and accidental writes need to be prevented. Additionally, the M24C64-WMN6T supports byte and page write, with up to 32 bytes on a single page, allowing for efficient data management and reduced programming time.
The device also includes a built-in 4-byte page write buffer, further enhancing write performance. For data protection, the M24C64-WMN6T offers a programmable write protect feature for the upper half of the memory array. This is an essential feature for applications that require a portion of the data to remain unchanged while allowing the rest of the memory to be updated.
STMicroelectronics has designed the M24C64-WMN6T with a high cycle endurance of 1 million write cycles and a data retention period of 40 years, ensuring long-term reliability of the stored data. The EEPROM comes in an 8-pin SOIC package, which is widely used and easy to integrate into various circuit designs.
In summary, the M24C64-WMN6T from STMicroelectronics is a robust and reliable EEPROM solution, perfect for applications that require a significant amount of non-volatile memory storage with the flexibility of serial communication and the assurance of data integrity over an extended period.
