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Category Integrated Circuits(ICs)
Family Memory
Manufacturer STMicroelectronics
Win Source Part Number 304938-M24256-BVMN6T
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian M24256-BVMN6T CAD Model

Description

The M24256-BVMN6T is a 256-Kbit I²C-compatible EEPROM (Electrically Erasable Programmable Read-Only Memory) device from STMicroelectronics, designed for optimal flexibility and efficiency. It operates on a supply voltage range of 2.5V to 5.5V, making it suitable for a wide array of applications, from industrial to consumer electronics.

This high-speed, low-power device is capable of 1 million erase/write cycles, with a data retention of 40 years, ensuring reliability and longevity for applications that require frequent data updates. The M24256-BVMN6T supports a fast I²C serial interface with up to 1 MHz protocol, enabling quick data transfer and communication with microcontrollers or other I²C devices.

A standout feature of the M24256-BVMN6T is its byte and page write capability (up to 64 bytes), which allows for efficient use of memory space and flexibility in data management. Additionally, the device offers a hardware write control feature through its Write Protect (WP) pin, providing an extra layer of data security.

The EEPROM comes in an ultra-thin, small leadless package (UFDFPN8) that is RoHS compliant and halogen-free, meeting the latest environmental standards and ensuring compatibility with modern environmentally-conscious manufacturing processes. Its compact size (2x3 mm) makes it an excellent choice for space-constrained applications.

STMicroelectronics has equipped the M24256-BVMN6T with a random and sequential read mode, which adds to the device's versatility. This feature allows for easy access to any memory location, facilitating complex data structures and storage algorithms.

In conclusion, the M24256-BVMN6T from STMicroelectronics is a robust, reliable, and versatile EEPROM solution that offers high performance for a variety of data storage needs. Its wide voltage range, large number of write cycles, substantial data retention, and security features make it an excellent choice for designers and engineers looking to incorporate non-volatile memory into their systems.

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