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CS1H010MCRC54

Part No CS1H010MCRC54
Manufacturer STMicroelectronics
Catalog OEM Parts (C - E)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1053264-CS1H010MCRC54
Categories OEM Parts(C-E)
Manufacturer STMicroelectronics
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian CS1H010MCRC54 CAD Model

Description

STMicroelectronics CS1H010MCRC54 - High-Performance SiC MOSFET

The CS1H010MCRC54 is a cutting-edge Silicon Carbide (SiC) MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its commitment to delivering innovative and reliable components. This high-performance power transistor is designed to meet the efficiency and reliability demands of modern high-power applications, including electric vehicles, renewable energy systems, and power supplies.

With a drain-source voltage (V<sub>DS) rating of 1200V and a continuous drain current (I<sub>D) of 10A at 25°C, this MOSFET is optimized for high-efficiency power conversion. Its SiC technology enables operation at higher frequencies with reduced switching losses compared to traditional silicon devices. This translates to improved thermal performance and higher system efficiency, which are crucial in power-intensive applications.

The CS1H010MCRC54 boasts an ultra-low on-resistance (R<sub>DS(on)) of only 54 mΩ at 25°C, minimizing conduction losses and further enhancing overall system efficiency. This low R<sub>DS(on) remains stable over a wide temperature range, ensuring consistent performance even under extreme conditions.

Designed with robustness in mind, this SiC MOSFET features a high threshold voltage (V<sub>TH) that decreases the likelihood of unintended turn-on due to noise, as well as a body diode with low reverse recovery charge (Q<sub>rr), which is essential for fast switching and reducing electromagnetic interference (EMI). The device also includes an integrated Kelvin source connection, which helps to minimize gate ringing and further improves the switching performance.

STMicroelectronics has packaged the CS1H010MCRC54 in a compact and industry-standard HiP247 package, which is designed to offer excellent thermal resistance and mechanical robustness, making it suitable for high-power density designs.

Overall, the CS1H010MCRC54 is an exemplary choice for designers looking to leverage the advantages of SiC technology in their power conversion systems. It offers superior performance, efficiency, and reliability, which are paramount in today's energy-conscious and fast-evolving technological landscape.

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