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SSM4953M

Part No SSM4953M
Manufacturer Silicon Standard Corp.
Catalog Electronic Wholesale
Description P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Sample
Rohs State rohs
ECAD Module
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Manufacturer Silicon Standard Corp.
Win Source Part Number 1259552-SSM4953M
Manufacturer Homepage www.siliconstandard.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM4953M CAD Model

Description

The SSM4953M is a P-Channel enhancement mode MOSFET produced by Silicon Standard Corp. It's designed for use in low voltage, high-side load switching and battery management applications. This MOSFET offers a good balance of low on-resistance and gate charge, which contributes to efficient power conversion and reduced switching losses.

Applications:

  • Battery Management Systems (BMS): Used for protection and control in lithium-ion battery packs commonly found in portable electronics and power tools.
  • Load Switching: Suitable for switching high-side loads in power distribution systems.
  • Power Management in Portable Devices: Efficient power switching in smartphones, tablets, and other mobile devices.
  • DC-DC Converters: Can be used as a switching element in DC-DC converters.

Features:

  • P-Channel MOSFET: Allows for simpler high-side drive circuitry compared to N-channel MOSFETs.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Low Gate Charge (Qg): Reduces switching losses and improves switching speed.
  • Small Footprint: Typically available in compact surface mount packages suitable for space-constrained applications.
  • Avalanche Rated: Can withstand a specified amount of energy during avalanche breakdown.

Benefits:

  • Increased Efficiency: Low on-resistance and gate charge lead to reduced power losses and improved efficiency in power switching applications.
  • Extended Battery Life: Efficient power management contributes to longer battery life in portable devices.
  • Simplified Design: P-channel configuration simplifies high-side switching designs.
  • Reduced Heat Dissipation: Lower power losses result in reduced heat generation, improving system reliability.
  • Compact Design: Small package size allows for integration into space-constrained applications.

Additional Details:

The SSM4953M's key specifications typically include a drain-source voltage (VDS) rating of -30V, a gate-source voltage (VGS) rating of ±20V, and a continuous drain current (ID) rating that varies depending on the specific operating conditions and package. The on-resistance (RDS(on)) is usually specified at different gate-source voltages. It's packaged in a small surface mount package, such as a SOP-8 or similar. This MOSFET also features ESD protection to prevent damage from electrostatic discharge. This product is RoHS compliant, signifying its compliance with environmental regulations regarding hazardous substances.

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