The SVD7N80T is a high-voltage N-channel MOSFET from Silan Semiconductor, designed for efficient power switching applications. It features an 800V drain-source voltage rating and is fabricated using advanced trench technology for low on-state resistance and reduced gate charge. This MOSFET is available in a TO-220 package.
Applications:
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Lighting Ballasts
- DC-DC Converters
Features:
- High voltage capability: 800V
- Low on-state resistance: Rds(on) = typically 1.2 Ohms @ Vgs = 10V
- Fast switching speed
- Low gate charge: Qg = typically 12nC
- Avalanche energy rated
- TO-220 package
Benefits:
- Improved efficiency due to low on-state resistance
- Reduced power dissipation and heat generation
- Simplified thermal management
- Enhanced system reliability
- Suitable for high-frequency operation
- Cost-effective power switching solution
Additional Details:
The SVD7N80T is designed with avalanche ruggedness, providing added protection against voltage transients. The TO-220 package allows for efficient heat dissipation. It is intended for operation within a temperature range of -55°C to +150°C. The low gate charge contributes to faster switching speeds and reduced switching losses.
Technical Specifications:
- Drain-Source Voltage (Vds): 800V
- Gate-Source Voltage (Vgs): ±30V
- Continuous Drain Current (Id): 7A
- Pulsed Drain Current (Idm): 21A
- Single Pulse Avalanche Energy (Eas): 120 mJ
- Operating Junction Temperature: -55°C to +150°C
