The SVD7N80T is a high-voltage N-channel MOSFET from Silan Semiconductor, designed for efficient power switching applications. It features an 800V drain-source voltage rating and is fabricated using advanced trench technology for low on-state resistance and reduced gate charge. This MOSFET is available in a TO-220 package.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• Uninterruptible Power Supplies (UPS)
• Lighting Ballasts
• DC-DC Converters

Features:

• High voltage capability: 800V
• Low on-state resistance: Rds(on) = typically 1.2 Ohms @ Vgs = 10V
• Fast switching speed
• Low gate charge: Qg = typically 12nC
• Avalanche energy rated
• TO-220 package

Benefits:

• Improved efficiency due to low on-state resistance
• Reduced power dissipation and heat generation
• Simplified thermal management
• Enhanced system reliability
• Suitable for high-frequency operation
• Cost-effective power switching solution

Additional Details:

The SVD7N80T is designed with avalanche ruggedness, providing added protection against voltage transients. The TO-220 package allows for efficient heat dissipation. It is intended for operation within a temperature range of -55°C to +150°C. The low gate charge contributes to faster switching speeds and reduced switching losses.

Technical Specifications:

• Drain-Source Voltage (Vds): 800V
• Gate-Source Voltage (Vgs): ±30V
• Continuous Drain Current (Id): 7A
• Pulsed Drain Current (Idm): 21A
• Single Pulse Avalanche Energy (Eas): 120 mJ
• Operating Junction Temperature: -55°C to +150°C