The GP2S09B is a compact, reflective photosensor manufactured by Sharp Microelectronics. It integrates an infrared emitting diode (IRED) and a phototransistor into a single package. This sensor is designed to detect the presence or absence of an object by measuring the amount of infrared light reflected back to the phototransistor. Its small size and high sensitivity make it suitable for a wide range of detection and control applications.
Applications
- Object detection in automated systems
- Robotics
- Proximity sensing
- Paper detection in printers and copiers
- Coin detection in vending machines
- End-of-tape detection in tape recorders
Features
- Compact size: Small footprint allows for easy integration into space-constrained applications.
- Integrated IRED and phototransistor: Simplifies circuit design and reduces component count.
- High sensitivity: Detects objects at a short distance with high accuracy.
- Low current consumption: Minimizes power requirements.
- Fast response time: Enables quick detection and reaction.
- High immunity to ambient light: Reduces the impact of external light sources on detection accuracy.
Benefits
- Easy implementation: Integrated design simplifies circuit design and reduces development time.
- Accurate detection: High sensitivity ensures reliable object detection.
- Energy efficient: Low current consumption makes it suitable for battery-powered applications.
- Fast response: Enables real-time control and monitoring.
- Reliable performance: High immunity to ambient light ensures accurate detection in various environments.
- Cost-effective solution: Provides a compact and efficient sensing solution at a reasonable price.
Additional Details
The GP2S09B typically operates with a forward current of around 20mA for the IRED and a collector-emitter voltage of around 30V for the phototransistor, but specifications may vary depending on exact usage conditions. The peak emission wavelength of the IRED is typically in the infrared range (e.g., 940 nm). The sensor's detection distance varies based on the object's reflectivity. Detailed optical and electrical characteristics can be found in the Sharp Microelectronics datasheet.