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Manufacturer Sharp Microelectronics
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 824212-GP1S51
Ultra Librarian 3D Model Ultra Librarian GP1S51 CAD Model

Description

The GP1S51 is a compact, high-sensitivity transmissive photosensor manufactured by Sharp Microelectronics. It combines an infrared LED (IRED) and a phototransistor in a single package. The device detects the presence or absence of an object interrupting the infrared beam between the LED and the phototransistor. It's designed for various applications requiring non-contact object detection.

Applications:

  • Printers: Used for paper detection and paper feed control.
  • Copiers: Employed for detecting the presence of paper and controlling the paper path.
  • Automated Teller Machines (ATMs): Used for card detection.
  • Vending Machines: Detects the dispensing of products.
  • Robotics: Utilized for object detection and position sensing in robotic systems.
  • Optical Encoders: Provides feedback on rotary or linear motion.

Features:

  • Compact Package: Space-saving design for easy integration into various devices.
  • High Sensitivity: Responds to small interruptions of the infrared beam.
  • Transmissive Type: Operates by detecting the interruption of an infrared beam.
  • Built-in Infrared LED (IRED): Provides a reliable infrared light source.
  • Phototransistor Output: Converts infrared light into an electrical signal.
  • Fast Response Time: Enables quick detection of objects or events.

Benefits:

  • Non-Contact Detection: Eliminates physical contact with the object being detected, reducing wear and tear.
  • Reliable Operation: Provides consistent and accurate detection in various environments.
  • Easy Integration: Simple design and compact package facilitate easy integration into existing systems.
  • Long Lifespan: Offers a long operating life, reducing maintenance requirements.
  • Cost-Effective: Provides a cost-effective solution for object detection applications.

Additional Details:

The GP1S51 typically operates with a forward current of around 20mA for the IRED. The collector-emitter voltage of the phototransistor is usually in the range of 5V to 30V. The output current of the phototransistor depends on the intensity of the received infrared light and the load resistance. The device is typically mounted in a way that allows the object to pass through the gap between the IRED and the phototransistor. The GP1S51 offers a reliable and efficient solution for non-contact object detection in a wide range of applications. Its compact size and high sensitivity make it a versatile choice for many designs.

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