The 2SC5417 is a silicon NPN epitaxial planar transistor manufactured by SANYO Semiconductor. It is designed for use in high-frequency power amplifier applications.

Applications

• High-frequency power amplifiers
• Oscillators
• Mixers
• RF Modulators
• Communication equipment

Features

• NPN Epitaxial Planar Transistor
• High Transition Frequency (fT)
• Low Output Capacitance
• High Power Gain
• Excellent Linearity

Benefits

• Enables high-efficiency power amplification at high frequencies.
• Contributes to stable oscillation and mixing performance.
• Reduces signal distortion and improves signal quality.
• Facilitates efficient power transfer in RF circuits.
• Suitable for use in various communication systems and RF front-end designs.

Technical Specifications

The 2SC5417 typically features a collector-emitter voltage (VCEO) of 15V, a collector current (IC) of 1A, and a power dissipation (PC) of 2W. Its transition frequency (fT) is around 1.5 GHz, making it suitable for applications in the VHF and UHF bands. The device is commonly available in a small signal package.

For detailed specifications, please refer to the official datasheet from SANYO Semiconductor.