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Win Source Part Number WS1202723-SCT3060ALGC11
Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Ultra Librarian 3D Model Ultra Librarian SCT3060ALGC11 CAD Model

Description

SiCFET (Silicon Carbide) transistor, presented by Rohm Semiconductor, is a cutting-edge technology in discrete semiconductor products.

  • Channel Type: N-Channel MOSFET
  • Mounting Type: Through Hole
  • Drain to Source Voltage (Vdss): 650V
  • Operating Temperature: 175°C (TJ)
  • Package: TO-247N
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.6313 $57.7878
13+ $7.9026 $102.7338
20+ $7.6556 $153.1120
27+ $7.4087 $200.0349
35+ $7.1617 $250.6595
47+ $6.4209 $301.7823
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Availability: 3,866 pieces
MOQ: 6 pcs
Order Increment : 1 piece
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