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Same model may have multiple batches, images only for reference.
RS1E321GNTB1 Real Image
Same model may have multiple batches, images only for reference.

RS1E321GNTB1

Part No RS1E321GNTB1
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description RS1E321GN IS A POWER MOSFET WITH
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 32A , 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 2.1mOhm at 32A, 10V
Vgs(th) (Maximum) at Id 2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 42.8nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2850pF at 15V
Power Dissipation (Maximum) 3W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-HSOP
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803338-RS1E321GNTB1
Ultra Librarian 3D Model Ultra Librarian RS1E321GNTB1 CAD Model

Description

The RS1E321GNTB1 is an N-channel MOSFET from Rohm Semiconductor.

  • Drain to Source Voltage: 30V
  • Maximum Power Dissipation: 3W
  • Maximum Rds On: 2.1mOhm @ 32A @ 10V
  • Package: 8-HSOP
  • Temperature Range: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
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Availability: 7,500 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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