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RMW200N03FUBTB

Part No RMW200N03FUBTB
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 183527-RMW200N03FUBTB
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RMW200N03FUBTB CAD Model

Description

The RMW200N03FUBTB is a 30V, N-channel power MOSFET from Rohm Semiconductor, meticulously designed for efficient power switching. It employs Rohm's advanced trench gate technology to minimize on-resistance and gate charge, resulting in superior power conversion efficiency and reduced switching losses. The device comes in a compact, surface-mount package offering excellent thermal performance, suitable for space-constrained applications.

Applications:

  • DC-DC converters
  • Load switching
  • Power management in portable devices
  • Motor control

Features:

  • Low On-Resistance: Reduces conduction losses for higher efficiency.
  • Low Gate Charge: Minimizes switching losses at high frequencies.
  • Trench Gate Structure: Provides superior switching performance.
  • Compact Package: Allows for high-density board mounting.
  • 30V Drain-Source Voltage: Suitable for a variety of low-voltage applications.

Benefits:

  • Improved Efficiency: Lower on-resistance and gate charge lead to higher overall system efficiency.
  • Reduced Heat Generation: Lower losses translate to less heat, improving reliability and thermal management.
  • Faster Switching Speeds: Enhanced switching performance allows for higher frequency operation.
  • Compact Design: Small package size enables use in space-critical applications.
  • Enhanced Reliability: Robust design ensures stable performance under varying operating conditions.

Additional Details:

The RMW200N03FUBTB has a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) that depends on the application and thermal conditions. The on-resistance (Rds(on)) is exceptionally low, contributing to its high efficiency. The gate-source threshold voltage (Vgs(th)) is designed for easy gate driving, and the total gate charge (Qg) is minimized to reduce switching losses. The device's power dissipation depends on the thermal characteristics of the application. It comes in a surface-mount package optimized for thermal performance. This MOSFET is often used in synchronous rectification, load switching, and other power management functions in battery-powered devices, power adapters, and industrial equipment. Consult the specific datasheet for precise electrical characteristics, thermal resistance, and package dimensions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5881 $63.5240
90+ $1.3040 $117.3600
140+ $1.2624 $176.7360
190+ $1.2220 $232.1800
245+ $1.1816 $289.4920
330+ $1.0591 $349.5030
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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