The 852469-RGS80TSX2DHRC11 is a single IGBT used in discrete semiconductor products. It is specifically designed for high-power applications, with a maximum power rating of 555W.

• Maximum Power Rating: 555W
• Reverse Recovery Time: 198ns
• Design: Trench Field Stop
• Collector-Emitter Breakdown Voltage: 1200V
• Collector Current: 80A
• Pulsed Current Rating: 120A
• Vce(on): 2.1V @ 15V gate-emitter voltage and 40A collector current
• Switching Energy (on): 3mJ
• Switching Energy (off): 3.1mJ
• Gate Charge: 104nC
• Turn-on Delay: 49ns @ 25°C
• Turn-off Delay: 199ns @ 25°C
• Mounting: Through Hole
• Package: TO-247-3
• Supplier Device Package: TO-247N
• Operating Temperature: -40°C to 175°C
• ECCN: EAR99
• MSL Level: 1
• REACH Status: Unaffected
• HTSUS Code: 8541.29.0095
• Manufacturer: Rohm Semiconductor