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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 17.6mOhm at 8A, 10V
Vgs(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 5.8nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 295pF at 15V
Power Dissipation (Maximum) 2W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package HUML2020L8
Manufacturer Package 8-PowerUDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800676-RF4E080GNTR
Ultra Librarian 3D Model Ultra Librarian RF4E080GNTR CAD Model

Description

The MOSFET (Metal Oxide) N-Channel transistor is a high-quality electronic component designed for use in a variety of applications.

  • Drain to Source Voltage (Vdss): 30V
  • Power Dissipation (Maximum): 2W
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Operating Temperature: 150°C
  • Supplier Device Package: HUML2020L8
  • Manufacturer Package: 8-PowerUDFN
  • Gate Charge (Qg) (Maximum) @ Vgs: 5.8nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 295pF @ 15V
  • Packaging: Reel
  • Manufacturer Pack Quantity: 3,000

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2678 $65.6110
590+ $0.2199 $129.7410
915+ $0.2129 $194.8035
1,260+ $0.2061 $259.6860
1,625+ $0.1992 $323.7000
2,175+ $0.1786 $388.4550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 104,300 pieces
MOQ: 245 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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