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Manufacturer Rohm Semiconductor
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 835299-RF4E080BN TB
Ultra Librarian 3D Model Ultra Librarian RF4E080BN TB CAD Model

Description

The RF4E080BN TB is a Schottky Barrier Diode manufactured by Rohm Semiconductor. It is designed for high-frequency rectification and clamping applications due to its fast switching speed and low forward voltage drop. This diode is commonly used in various electronic circuits to improve efficiency and performance.

Applications

  • Switching Power Supplies: Used as a rectifier to convert AC voltage to DC voltage efficiently.
  • DC-DC Converters: Employed to improve the efficiency of voltage conversion in portable devices and power management circuits.
  • Reverse Polarity Protection: Protects circuits from damage caused by incorrect polarity connections.
  • Clamping Circuits: Used to limit voltage levels and prevent overvoltage conditions in sensitive circuits.
  • High-Frequency Rectification: Suitable for applications requiring fast and efficient rectification at high frequencies.

Features

  • Low Forward Voltage Drop: Minimizes power loss and improves efficiency in rectification circuits.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Small Package Size: Allows for compact circuit designs and space-saving applications.
  • High Surge Current Capability: Withstands high current surges without degradation, ensuring reliable operation.
  • RoHS Compliant: Meets environmental regulations for hazardous substances.

Benefits

  • Improved Efficiency: Reduces power consumption and heat generation in power supply and converter circuits.
  • Enhanced Performance: Enables faster switching speeds and improved response times in high-frequency applications.
  • Increased Reliability: Provides robust protection against voltage surges and reverse polarity connections.
  • Compact Design: Allows for smaller and more portable electronic devices.
  • Cost-Effective Solution: Offers a reliable and efficient solution for rectification and clamping applications at a competitive price.

Additional Details

The RF4E080BN TB Schottky Barrier Diode is characterized by its low forward voltage drop and fast reverse recovery time, making it ideal for high-frequency applications. Its small package size allows for dense circuit board designs. Key specifications include the forward current, reverse voltage, and operating temperature range. Detailed technical information can be found in the Rohm Semiconductor datasheet. Proper heat sinking may be required in high-current applications to ensure reliable operation.

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