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Same model may have multiple batches, images only for reference.
R8007AND3FRATL Real Image
Same model may have multiple batches, images only for reference.

R8007AND3FRATL

Part No R8007AND3FRATL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 7A TO252  /  N-Channel 800 V 7A (Tc) 140W (Tc) Surface Mount TO-252
Datasheet
R8007AND3FRATL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number R8007
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R8007AND3FRATLDKR,846-R8007AND3FRATLCT,846-R8007AND3FRATLTR
Standard Package 2,500
Win Source Part Number 1145380-R8007AND3FRATL
Ultra Librarian 3D Model Ultra Librarian R8007AND3FRATL CAD Model

Description

The R8007AND3FRATL is a N-channel MOSFET transistor that is widely used in various applications manufactured by Rohm Semiconductor.

  • Series: Automotive AEC-Q101
  • Maximum Drain to Source Voltage: 800V
  • Continuous Drain Current: 7A @ 25°C
  • Maximum Power Dissipation: 140W
  • Gate Charge: 28nC @ 10V

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