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R8007AND3FRATL

Part No R8007AND3FRATL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 7A TO252 / N-Channel 800 V 7A (Tc) 140W (Tc) Surface Mount TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number R8007
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R8007AND3FRATLDKR,846-R8007AND3FRATLCT,846-R8007AND3FRATLTR
Standard Package 2,500
Win Source Part Number 1145380-R8007AND3FRATL
Ultra Librarian 3D Model Ultra Librarian R8007AND3FRATL CAD Model

Description

The R8007AND3FRATL is a N-channel MOSFET transistor that is widely used in various applications manufactured by Rohm Semiconductor.

  • Series: Automotive AEC-Q101
  • Maximum Drain to Source Voltage: 800V
  • Continuous Drain Current: 7A @ 25°C
  • Maximum Power Dissipation: 140W
  • Gate Charge: 28nC @ 10V

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