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R6024KNXC7G Real Image1 R6024KNXC7G Real Image2
Same model may have multiple batches, images only for reference.
R6024KNXC7G Real Image1 R6024KNXC7G Real Image2
R6024KNXC7G Real Image1 R6024KNXC7G Real Image2
Same model may have multiple batches, images only for reference.

R6024KNXC7G

Part No R6024KNXC7G
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V 24A TO-220FM, HIGH-SPEED SW / N-Channel 600 V 24A (Ta) 74W (Tc) Through Hole TO-220FM
Datasheet
R6024KNXC7G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 74W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R6024KNXC7G
Standard Package 50
Win Source Part Number 1165077-R6024KNXC7G
Ultra Librarian 3D Model Ultra Librarian R6024KNXC7G CAD Model

Description

This is an N-channel MOSFET transistor.

  • Maximum Drain-Source Voltage: 600V
  • Continuous Drain Current: 24A @ 25°C
  • Maximum Power Dissipation: 74W
  • Mounting Type: Through Hole
  • Gate Charge: 45 nC @ 10V
  • Input Capacitance: 2000 pF @ 25V
  • Manufacturer: Rohm Semiconductor
  • Manufacturer Part Number: R6024KNXC7G

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