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DTC114TCAT116

Part No DTC114TCAT116
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description NPN 100MA 50V DIGITAL TRANSISTOR / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SST3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA (ICBO)
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SST3
Base Product Number DTC114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names DTC114TCAT116TR,DTC114TCAT116CT,DTC114TCAMGT116,DTC114TCAT116DKR
Standard Package 3,000
Win Source Part Number 1143319-DTC114TCAT116
Ultra Librarian 3D Model Ultra Librarian DTC114TCAT116 CAD Model

Description

The Rohm Semiconductor DTC114TCAT116 is a pre-biased NPN transistor with a maximum power rating of 200mW.

  • Maximum Power Rating: 200mW
  • Voltage Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 300mV @ 1mA, 10mA
  • Collector Cutoff Current: 500nA (ICBO)
  • DC Current Gain: 100 @ 1mA, 5V
  • Frequency Transition: 250MHz
  • Package/Case: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount
  • Base Resistor (R1): 10 kOhms

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3217 $57.9060
440+ $0.2640 $116.1600
680+ $0.2557 $173.8760
935+ $0.2476 $231.5060
1,210+ $0.2392 $289.4320
1,620+ $0.2145 $347.4900
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Availability: 5,560 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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