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Same model may have multiple batches, images only for reference.
DTC114TCAT116 Real Image
Same model may have multiple batches, images only for reference.

DTC114TCAT116

Part No DTC114TCAT116
Manufacturer Rohm Semiconductor
Catalog RF Transistors (BJT)
Description NPN 100MA 50V DIGITAL TRANSISTOR / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SST3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Rohm Semiconductor
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA (ICBO)
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SST3
Base Product Number DTC114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names DTC114TCAT116TR,DTC114TCAT116CT,DTC114TCAMGT116,DTC114TCAT116DKR
Standard Package 3,000
Win Source Part Number 1143319-DTC114TCAT116
Ultra Librarian 3D Model Ultra Librarian DTC114TCAT116 CAD Model

Description

The Rohm Semiconductor DTC114TCAT116 is a pre-biased NPN transistor with a maximum power rating of 200mW.

  • Maximum Power Rating: 200mW
  • Voltage Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 300mV @ 1mA, 10mA
  • Collector Cutoff Current: 500nA (ICBO)
  • DC Current Gain: 100 @ 1mA, 5V
  • Frequency Transition: 250MHz
  • Package/Case: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount
  • Base Resistor (R1): 10 kOhms

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