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BU2911

Part No BU2911
Manufacturer Rohm Semiconductor
Catalog Custom Parts (B - D)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 1171091-BU2911
Categories Custom Parts
Manufacturer Rohm Semiconductor
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BU2911 CAD Model

Description

The BU2911 is a high-voltage, high-speed switching NPN power transistor manufactured by Rohm Semiconductor. It is designed for use in various power supply and motor control applications. This transistor offers robust performance and reliability in demanding environments.

Applications:

  • Switching power supplies
  • Motor control circuits
  • Inverter circuits
  • High-voltage DC-DC converters
  • Lighting ballasts

Features:

  • High breakdown voltage (VCEO = 450V)
  • High collector current (IC = 5A)
  • Fast switching speed (tf = 0.2µs typical)
  • Low saturation voltage (VCE(sat) = 1.5V max at IC = 3A)
  • High power dissipation (PC = 80W)
  • TO-220 package for easy mounting and heat dissipation

Benefits:

  • Efficient power conversion due to fast switching speed
  • Reliable operation in high-voltage applications
  • Reduced power loss due to low saturation voltage
  • Easy integration into various circuit designs
  • Improved system efficiency and performance

Additional Details:

The BU2911 is housed in a TO-220 package, which allows for efficient heat dissipation. It is characterized by its high breakdown voltage, making it suitable for applications where voltage spikes are common. The fast switching speed minimizes switching losses, contributing to overall system efficiency. The device is designed to operate over a wide temperature range. The BU2911 is a silicon NPN transistor. Detailed parameters include a collector-base voltage (VCBO) of 450V, an emitter-base voltage (VEBO) of 7V, and a collector dissipation of 80W at a case temperature of 25°C. The operating and storage junction temperature range is -65°C to +150°C. The DC current gain (hFE) ranges from 5 to 20 at a collector current of 3A and a collector-emitter voltage of 5V. This transistor is often used in applications requiring a rugged and reliable switching device.

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