The 2SB1344 is a PNP silicon epitaxial transistor manufactured by Rohm Semiconductor. It is designed for use in medium power amplifier and switching applications. This transistor features a high collector current and low saturation voltage, making it suitable for various applications in consumer and industrial electronics.
Applications
- Medium power amplifiers
- Switching circuits
- Motor control circuits
- DC-DC converters
- Audio output stages
Features
- PNP Silicon Epitaxial Transistor
- High collector current
- Low saturation voltage
- High hFE (DC current gain)
- Compact TO-126 package
Benefits
- Efficient power amplification and switching
- Low power dissipation
- Good linearity
- Simple to integrate into circuits
- Cost-effective solution
Technical Specifications
The 2SB1344 has a collector-emitter voltage (VCEO) of -60V, a collector current (IC) of -3A, and a power dissipation (PC) of 10W. The DC current gain (hFE) ranges from 80 to 240. The saturation voltage (VCE(sat)) is typically -0.5V at IC = -1A. The transition frequency (fT) is 80 MHz. The operating junction temperature range is -55°C to +150°C. The transistor is available in a TO-126 package.
The Rohm 2SB1344 is a reliable and versatile PNP transistor designed for medium power applications. Its high collector current and low saturation voltage make it a suitable choice for efficient power amplification and switching circuits in a variety of electronic devices.
