The 2SB1326 is a PNP silicon epitaxial transistor manufactured by Rohm Semiconductor. It is designed for use in low-frequency power amplifier and switching applications. This transistor features low saturation voltage and high current capability, making it suitable for various consumer and industrial electronic devices.
Applications
- Low-frequency power amplifiers
- Switching circuits
- Motor drivers
- DC-DC converters
- Audio amplifiers
Features
- PNP Silicon Epitaxial Transistor
- Low saturation voltage
- High current capability
- High hFE (DC current gain)
- Compact package
Benefits
- Efficient power amplification
- Low power dissipation
- Stable performance
- Easy to design into circuits
- Compact size for space-constrained applications
Technical Specifications
The 2SB1326 has a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -3A, and a power dissipation (PC) of 1.2W. The DC current gain (hFE) ranges from 70 to 240. The saturation voltage (VCE(sat)) is typically -0.5V at IC = -1A. The transition frequency (fT) is 100 MHz. The operating junction temperature range is -55°C to +150°C. The transistor is available in a compact SOT-89 package.
The Rohm 2SB1326 is a reliable and versatile PNP transistor for use in a variety of low-frequency power applications. Its low saturation voltage and high current capability make it an excellent choice for efficient power amplification and switching circuits.
