The 2SA1952 is a silicon PNP epitaxial planar transistor manufactured by Rohm Semiconductor. This transistor is designed for high-power audio amplifier applications, offering excellent linearity and low distortion. It is typically paired with a complementary NPN transistor in push-pull amplifier configurations to deliver high-quality audio reproduction. The device is packaged in a TO-3P package, enabling efficient heat dissipation in demanding power amplifier designs.

Applications:

• High-Power Audio Amplifiers
• Hi-Fi Audio Systems
• Professional Audio Equipment
• Power Amplifiers in Musical Instruments
• High-End Audio Receivers

Features:

• High Collector Current Capability
• Low Distortion
• PNP Epitaxial Planar Transistor
• TO-3P Package for High Power Dissipation
• Excellent Linearity

Benefits:

• High-fidelity audio reproduction with minimal distortion.
• Suitable for driving large speakers due to its high current capability.
• Efficient heat dissipation ensures reliable operation at high power levels.
• Improved audio clarity and detail due to excellent linearity.
• Robust and reliable performance in demanding audio applications.

Specifications:

The 2SA1952 typically features a collector-emitter voltage (VCEO) rating of -230V, a collector current (IC) rating of -15A, and a power dissipation rating appropriate for the TO-3P package. Key parameters include current gain (hFE), saturation voltage (VCE(sat)), and transition frequency (fT). Refer to the datasheet for detailed electrical characteristics, thermal resistance values, and safe operating area information.