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Same model may have multiple batches, images only for reference.
UPA2791GR-E1-AT Real Image
Same model may have multiple batches, images only for reference.

UPA2791GR-E1-AT

Part No UPA2791GR-E1-AT
Manufacturer Renesas Electronics America
Catalog FETs - Arrays
Description POWER, 5A, 30V, N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Max) @ Id, Vgs 36mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
Power - Max 2W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-PSOP
Base Product Number UPA2791
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 841554-UPA2791GR-E1-AT
Ultra Librarian 3D Model Ultra Librarian UPA2791GR-E1-AT CAD Model

Description

The 841554-UPA2791GR-E1-AT is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) array designed for discrete semiconductor applications.

  • Feature: Logic level gate
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 5A @ 25°C
  • Maximum On-Resistance (Rds On): 36mOhm @ 3A and 10V
  • Manufacturer: Renesas Electronics America
  • Status: Obsolete
  • Package: Bulk
  • Standard Package: 3,000 pieces
  • ECCN: EAR99
  • HTSUS code: 8541.29.0095

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Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
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