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RJL5014DPP-A0#T2

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Part No	RJL5014DPP-A0#T2
Manufacturer	Renesas Electronics America
Catalog	Transistors - FETs, MOSFETs - RF
Description	ABU / MOSFET HV / N-Channel 500 V 19A (Ta) 35W (Ta) Through Hole TO-220FN
Datasheet	RJL5014DPP-A0#T2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Renesas Electronics America Inc
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	400mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 25 V
Power Dissipation (Max)	35W (Ta)
Temperature Range - Operating	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220FN
Package / Case	TO-220-3 Full Pack
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	-1161-RJL5014DPP-A0#T2,559-RJL5014DPP-A0#T2
Standard Package	25
Win Source Part Number	1224957-RJL5014DPP-A0#T2
Ultra Librarian 3D Model	Ultra Librarian RJL5014DPP-A0#T2 CAD Model

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Description

The Renesas Electronics America RJL5014DPP-A0#T2 is an N-channel MOSFET transistor that comes in a TO-220-3 Full Pack package.

Maximum Drain-to-Source Voltage: 500 V
Continuous Drain Current: 19A (Ta)

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RJL5014DPP-A0#T2

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