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Same model may have multiple batches, images only for reference.
RJK2511DPK-00#T0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJK2511DPK-00#T0

Part No RJK2511DPK-00#T0
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 65A TO3P / N-Channel 250 V 65A (Ta) 200W (Tc) Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-220-3 Full Pack
Base Product Number RJK2511
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1
Win Source Part Number 1210640-RJK2511DPK-00#T0
Ultra Librarian 3D Model Ultra Librarian RJK2511DPK-00#T0 CAD Model

Description

The RJK2511DPK-00#T0 is an N-Channel MOSFET (Metal Oxide) transistor that comes in a TO-220-3 Full Pack package.

  • Vdss: 250 V
  • Id: 65A (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 32.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: 150°C (TJ)

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