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2SK279STR-E

Part No 2SK279STR-E
Manufacturer Renesas Electronics America
Catalog JFETs (Junction Field Effect)
Description Silicon N Channel MOS FET High Speed Power Switching
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Renesas Electronics America
Win Source Part Number 159635-2SK279STR-E
Popularity Low
Supply and Demand Status Balance
Family Name 2SK2796STR
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian 2SK279STR-E CAD Model

Description

Product Overview

Introducing the 2SK279STR-E, a quintessential MOSFET for modern electronic applications demanding high efficiency and reliability. Its design underscores a qualitative enhancement in power processing, perfect for consistent energy distribution and management tasks.

Applications and Projects

  • High-Speed Pulse Circuits
  • Voltage Regulation Devices
  • LED Lighting Solutions
  • Consumer Electronics Power Supplies
  • Power Factor Correction Circuits
  • Industrial Control Systems

Features and Benefits

  • Energy Efficient Design: Promotes optimal performance with reduced energy waste.
  • High-Endurance Structure: Extends the device's lifespan even under rigorous conditions.
  • Rapid Switching Characteristics: Facilitates consistent and smooth operational flow.
  • Scalability: Easily adapts to various technology platforms, enhancing flexibility in design.

The advanced features of the 2SK279STR-E make it pivotal in optimizing power management frameworks, especially in scenarios requiring steady and efficient energy manipulation.

Additional Details

Engineered to suit a spectrum of technical requirements, this MOSFET aids in simplifying design processes while maximizing functional efficacy. The component's innovative build supports broad-spectrum applications, helping it fulfill roles in both contemporary and traditional electronic designs.

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Shipping Information

Shipped from HK warehouse
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