The 2SC3360(0)-T1B-A is a silicon NPN epitaxial planar transistor manufactured by Renesas Electronics America. This transistor is designed for high-frequency amplification and oscillation applications.

Applications

• High-frequency amplifiers
• Oscillators
• RF communication equipment
• Instrumentation amplifiers

Features

• Low noise figure
• High gain
• High transition frequency
• Excellent linearity
• Small package size

Benefits

• Improved signal amplification in high-frequency circuits
• Stable oscillation performance
• Enhanced signal clarity in RF applications due to low noise
• Reduced overall circuit size due to the compact package
• Optimized for low-power operation

Technical Specifications

The 2SC3360(0)-T1B-A features a collector-emitter voltage (Vceo) of 12V, a collector current (Ic) of 50mA, and a transition frequency (fT) of 6.5 GHz. It has a low noise figure and high power gain, making it suitable for sensitive receiver and amplifier circuits. The device is typically supplied in a small surface-mount package, making it ideal for high-density circuit designs.

This transistor's high transition frequency allows it to operate efficiently in high-frequency circuits, contributing to optimal performance in communications equipment and other high-speed applications. The low noise figure ensures that the amplified signal remains clean and free from unwanted interference. The device is designed to provide a stable and reliable performance over a wide range of operating conditions.