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STP9435M-TRG

Part No STP9435M-TRG
Manufacturer Others
Catalog Miscellaneous
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Win Source Part Number 347464-STP9435M-TRG
Ultra Librarian 3D Model Ultra Librarian STP9435M-TRG CAD Model

Description

The STP9435M-TRG is a P-channel enhancement mode MOSFET designed for power switching applications. It features low on-resistance and fast switching speeds, making it suitable for efficient power management in a variety of electronic devices. This MOSFET is commonly used in applications requiring load switching and power control.

Applications:

  • Battery Management Systems (BMS): Used as a load switch to control power to various system components.
  • DC-DC Converters: Efficient switching in voltage regulation circuits.
  • Power Management in Portable Devices: Optimizing power consumption in smartphones, tablets, and laptops.
  • Load Switching: Controlling power to various loads in electronic systems.
  • Motor Control: Low-side switching in small motor control applications.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • Fast Switching Speed: Reduces switching losses and enhances system performance.
  • Logic Level Gate Drive: Simplifies interfacing with microcontrollers and digital circuits.
  • High Avalanche Ruggedness: Ensures robust operation in demanding environments.
  • Surface Mount Package: Enables compact and efficient PCB layouts.

Benefits:

  • Increased Efficiency: Lower RDS(on) results in less power dissipation and higher efficiency.
  • Improved Thermal Performance: Surface mount package facilitates effective heat dissipation.
  • Simplified Design: Logic-level gate drive simplifies the integration process.
  • Enhanced Reliability: High avalanche ruggedness ensures robust operation.
  • Reduced System Size: Compact surface mount package minimizes board space requirements.

Additional Details:

The STP9435M-TRG's key electrical characteristics include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)). These parameters determine its suitability for specific applications. The gate charge (Qg) influences switching speed and power consumption, while the thermal resistance (Rth) is crucial for thermal management. It's often used in conjunction with microcontrollers or dedicated power management ICs to implement efficient power switching and control. Proper layout techniques are essential to minimize parasitic inductance and capacitance, ensuring optimal performance and stability. The device is typically housed in a small outline package (SOP) or similar surface-mount configuration.

This P-channel MOSFET is well-suited for applications where a low-side switch is required or where a negative voltage is being switched. It's a common choice in battery-powered devices due to its efficiency and compact size. Its robust design ensures reliable operation in a variety of environments. Consult the datasheet for detailed specifications and application recommendations to ensure proper implementation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1640 $58.2200
865+ $0.1340 $115.9100
1,330+ $0.1305 $173.5650
1,835+ $0.1259 $231.0265
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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