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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type NPN - Darlington
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 4V at 20mA, 5A
Current - Collector Cutoff (Maximum) 500μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 1000 at 3A, 3V
Maximum Power 2W
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Family Part Number TIP12*
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1267402-TIP120G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TIP120G CAD Model

Description

ON Semiconductor TIP120G Darlington Transistor

The TIP120G is a robust NPN Darlington bipolar power transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-voltage, high-current transistor is a versatile component suitable for a wide range of applications, including but not limited to, relay drivers, hammer drivers, lamp drivers, and display drivers in both industrial and consumer markets.

The TIP120G is capable of handling a collector-emitter voltage of 60V and a collector current of up to 5A, making it an excellent choice for driving heavy loads. Additionally, it boasts a high DC current gain, typically around 1000, which allows for a minimal base current to control larger collector currents, enhancing the efficiency of the overall system.

Featuring ON Semiconductor's innovative design, the TIP120G comes in a TO-220 package, known for its excellent power dissipation capabilities. This package ensures that the device can manage significant power levels without the need for an excessively large heatsink, thereby saving space and cost in circuit design.

Key specifications of the TIP120G include:

  • Collector-Emitter Voltage (VCEO): 60V
  • Collector Current (IC): 5A
  • Total Device Dissipation (PD) at 25°C: 65W
  • DC Current Gain (hFE): 1000 (minimum) at IC = 3A
  • Operating and Storage Junction Temperature Range: -65 to +150°C

One of the notable features of the TIP120G is its monolithic construction with built-in base-emitter shunt resistors. This internal design enhancement ensures a reliable operation even in the presence of high transient voltages, which could otherwise cause damage to the transistor or the circuit it is part of.

ON Semiconductor's commitment to environmental sustainability is reflected in the TIP120G, as it is a Pb-free, Halogen-free, and RoHS compliant component, ensuring its suitability for eco-friendly applications and global environmental compliance.

With its excellent performance, reliability, and ON Semiconductor's quality assurance, the TIP120G is an ideal choice for designers looking to implement a high-power switching solution in their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8797 $52.7820
140+ $0.7219 $101.0660
215+ $0.6993 $150.3495
300+ $0.6767 $203.0100
385+ $0.6542 $251.8670
515+ $0.5865 $302.0475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 1,750 pieces
MOQ: 60 pcs
Order Increment : 1 pieza
*Need More Quantity? *Request a Bulk Quantity Quotation?

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