The STMFS4833NT1G is a high-performance, N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is engineered to deliver efficient power management and conversion for a wide range of applications, including power supplies, motor controls, and consumer electronics.
Key Features
- Low RDS(on): Offers minimal on-state resistance, resulting in lower conduction losses and improved power efficiency.
- High Switching Speed: Enables fast switching applications, reducing transition losses and enhancing performance.
- Robust Thermal Performance: Designed to maintain stability and functionality even under high-temperature conditions.
- Advanced Trench Technology: Utilizes ON Semiconductor's cutting-edge trench technology for optimal RDS(on) area scaling.
Product Specifications
| Parameter |
Value |
| VDS Max |
30V |
| ID Max |
14A |
| RDS(on) Max |
8.7 mΩ |
| Package |
SOT-223 |
| Operating Temperature |
-55°C to +150°C |
Applications
The STMFS4833NT1G is versatile in its applications, suitable for:
- DC/DC Converters
- Power Management Systems
- Motor Drives and Controls
- Battery Powered Circuits
- Load Switches
- Power Tools
Quality and Reliability
ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The STMFS4833NT1G is no exception, offering long-term performance and durability for the most demanding electronic designs.