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SGS6N60UFDTU

Part No SGS6N60UFDTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 6 A
Current - Collector Pulsed (Icm) 25 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 3A
Power - Max 22 W
Switching Energy 57µJ (on), 25µJ (off)
Input Type Standard
Gate Charge 15 nC
Td (on/off) @ 25°C 15ns/60ns
Test Condition 300V, 3A, 80Ohm, 15V
Reverse Recovery Time (trr) 52 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F-3
Base Product Number SGS6N
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277405-SGS6N60UFDTU
Ultra Librarian 3D Model Ultra Librarian SGS6N60UFDTU CAD Model

Description

ON Semiconductor SGS6N60UFDTU MOSFET

The SGS6N60UFDTU from ON Semiconductor is a high-performance, N-channel, fast IGBT (Insulated Gate Bipolar Transistor) that offers a robust and efficient solution for a wide range of power applications. This device is designed to meet the stringent requirements of modern electronic circuits, providing high-speed switching, low on-state voltage, and minimal conduction losses.

Key Features

  • High Current Capability: The SGS6N60UFDTU is capable of handling continuous drain currents up to 6A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a drain-to-source voltage of 600V, this MOSFET can comfortably operate in circuits with high voltage levels without the risk of breakdown.
  • Low On-Resistance: A low RDS(on) minimizes conduction losses and improves overall efficiency, which is crucial for power-sensitive designs.
  • Fast Switching Speed: The device's fast switching characteristics ensure efficient operation with less switching loss, which is beneficial for high-frequency applications.
  • Robust Thermal Performance: The SGS6N60UFDTU comes in a TO-220F package that offers excellent thermal dissipation, ensuring reliable performance even under high temperature conditions.

Applications

The versatility of the SGS6N60UFDTU MOSFET makes it ideal for a variety of applications, including:

  • Power supply units
  • Inverters and converters
  • Motor drives
  • Switching applications
  • Lighting systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the SGS6N60UFDTU is no exception. It is built to meet high-quality standards, ensuring long-term reliability and performance in your products. Whether you're designing for industrial, commercial, or consumer markets, this MOSFET is an excellent choice for enhancing efficiency and durability.

Overall, the SGS6N60UFDTU from ON Semiconductor represents a fine balance between power handling, efficiency, and speed, making it a top contender for designers looking to optimize their power management systems.

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