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SBAS116LT1G

Part No SBAS116LT1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 75V 200MA SOT23-3  /  Diode Standard 75 V 200mA (DC) Surface Mount SOT-23-3 (TO-236)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr onsemi
Package Tape & Reel
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 3 µs
Current - Reverse Leakage @ Vr 5 nA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz
Mounting SMD (SMT)
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number SBAS116
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Other Names SBAS116LT1GOSTR,SBAS116LT1GOSCT,2156-SBAS116LT1G-OS,ONSONSSBAS116LT1G,SBAS116LT1G-ND,SBAS116LT1GOSDKR
Standard Package 3,000
Win Source Part Number 966410-SBAS116LT1G
Ultra Librarian 3D Model Ultra Librarian SBAS116LT1G CAD Model

Description

The SBAS116LT1G is a high-performance Schottky barrier diode designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This diode is specially crafted to offer low forward voltage drop, minimal reverse leakage, and fast switching capabilities. The SBAS116LT1G is a versatile component that caters to a broad range of applications, including power supply, voltage clamping, and protection circuits.

Key Features

  • Low Forward Voltage Drop: The device ensures efficient operation by minimizing the voltage drop across the diode when forward biased, thereby reducing power loss and improving overall efficiency.
  • Fast Switching Speed: With its rapid switching characteristics, the SBAS116LT1G is suitable for high-frequency applications, contributing to better performance in circuits requiring fast turn-on and turn-off times.
  • Low Reverse Leakage: The diode exhibits low leakage current when reverse biased, which helps in maintaining the integrity of the circuit by preventing unnecessary power drain.
  • High Surge Capability: It can withstand high surge currents, making it reliable in applications where transient overvoltage conditions may occur.
  • Compact Package: The SBAS116LT1G comes in a small SOD-123 package, making it ideal for space-constrained applications without compromising on power handling capabilities.

Applications

  • DC/DC Converters
  • Power Management Systems
  • Automotive Circuits
  • Portable Devices
  • Switching Power Supplies

Environmental and Quality Certifications

The SBAS116LT1G is compliant with various environmental standards, including RoHS and Pb-Free, ensuring that it meets global environmental requirements. ON Semiconductor is committed to delivering high-quality products, and this diode is no exception, undergoing rigorous testing to ensure reliability and performance.

Conclusion

ON Semiconductor's SBAS116LT1G is an excellent choice for designers looking for a Schottky barrier diode that offers a balance between efficiency, speed, and compactness. Whether it's for power regulation, protection, or high-speed switching, this diode stands out with its superior performance and reliability, making it a valuable component in a wide array of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2210 $50.8300
555+ $0.1814 $100.6770
855+ $0.1757 $150.2235
1,180+ $0.1700 $200.6000
1,525+ $0.1644 $250.7100
2,040+ $0.1474 $300.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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