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NTMFS4H013NFT1G

Part No NTMFS4H013NFT1G
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 25V 35A SO8FL / Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) at 25°C 43A , 269A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 0.9mOhm at 30A, 10V
Vgs(th) (Maximum) at Id 2.1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3923pF at 12V
Power Dissipation (Maximum) 2.7W , 104W (Tc)
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 1,500
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812053-NTMFS4H013NFT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS4H013NFT1G CAD Model

Description

ON Semiconductor NTMFS4H013NFT1G Product Overview

The ON Semiconductor NTMFS4H013NFT1G is a cutting-edge N-channel Power MOSFET that delivers high performance in a wide range of applications. This MOSFET is designed to handle high currents and voltages with great efficiency, making it an ideal choice for power management tasks in various electronic devices.

Key Features

  • High Current Capability: The NTMFS4H013NFT1G supports continuous drain currents (ID), allowing it to handle high-power applications with ease.
  • Low RDS(on): It features a low on-state resistance, which minimizes power losses and improves overall efficiency.
  • High Switching Speed: With fast switching capabilities, this MOSFET is suitable for high-frequency power switching applications.
  • Robust Thermal Performance: The NTMFS4H013NFT1G is encapsulated in a compact, thermally efficient package that helps to dissipate heat effectively, enhancing the reliability and longevity of the component.

Applications

This versatile MOSFET can be used in a variety of applications, including:

  • DC/DC converters
  • Power supply units
  • Motor control circuits
  • Computing and server systems
  • Automotive electronics
  • Telecommunications equipment

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 30V
Continuous Drain Current (ID) 300A
On-State Resistance (RDS(on)) 0.0013Ω
Power Dissipation (PD) 125W
Operating Temperature Range -55°C to +175°C

The NTMFS4H013NFT1G MOSFET from ON Semiconductor represents a reliable and efficient solution for designers looking to improve power management systems in their next-generation electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5985 $50.8725
205+ $0.4911 $100.6755
320+ $0.4757 $152.2240
435+ $0.4604 $200.2740
565+ $0.4450 $251.4250
755+ $0.3990 $301.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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