The ON Semiconductor NTMFS4926T1G is a high-performance, dual N-channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This compact and energy-efficient device is a perfect choice for modern electronic systems that require low on-resistance, high switching speed, and minimal power losses.

Key Features:

• Low R_DS(on): The NTMFS4926T1G offers an exceptionally low drain-to-source on-resistance of just 7.8 mΩ at V_GS = 10 V, which enhances overall efficiency by reducing conduction losses.
• High Continuous Drain Current: With a continuous drain current (I_D) of 30 A, this MOSFET can handle significant power, making it suitable for demanding applications.
• Power Dissipation: The device's power dissipation is 3.8 W, allowing it to manage the thermal aspects of operations effectively.
• Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, the NTMFS4926T1G achieves superior performance in terms of switching speed and reliability.
• Temperature Performance: It is capable of operating over a wide temperature range from -55°C to 150°C, ensuring stability and functionality under varying environmental conditions.
• RoHS Compliant: The MOSFET is fully RoHS compliant, meeting environmental standards and reducing hazardous substances in electronic devices.

Applications:

The NTMFS4926T1G is ideal for a variety of applications, including:

• DC/DC converters
• Power management systems
• Motor drives
• Computing and server power supplies
• Telecommunication equipment
• Automotive applications and more

Package and Quality:

Encased in a compact SO-8FL package, the NTMFS4926T1G is designed for surface-mount technology (SMT), which allows for efficient assembly and space-saving PCB design. ON Semiconductor ensures high-quality standards, providing reliable and consistent performance for all their products.