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Same model may have multiple batches, images only for reference.
NTBG070N120M3S ON Semiconductor – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

NTBG070N120M3S

Part No NTBG070N120M3S
Manufacturer ON Semiconductor
Catalog Discrete Semiconductor Products
Description SILICON CARBIDE (SIC) MOSFET - E
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr onsemi
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 4.4V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
Power Dissipation (Max) 172W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging Tape & Reel (TR)Cut Tape (CT)
Ultra Librarian 3D Model Ultra Librarian NTBG070N120M3S CAD Model

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