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Same model may have multiple batches, images only for reference.
SIRA18DDP-T1-GE3 Siliconix – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

SIRA18DDP-T1-GE3

Part No SIRA18DDP-T1-GE3
Manufacturer Siliconix
Catalog Discrete Semiconductor Products
Description MOSFET N-CH 30V 9A PPAK SO-8
Datasheet
SIRA18DDP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 15 V
Power Dissipation (Max) 3.8W (Ta), 17W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Ultra Librarian 3D Model Ultra Librarian SIRA18DDP-T1-GE3 CAD Model

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