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NSVMMBD717LT1G

Part No NSVMMBD717LT1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE SCHOTTKY 20V SC70-3 / Diode Array 1 Pair Common Anode 20 V 10mA (DC) Surface Mount SC-70, SOT-323
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes>Rectifiers>Diode Arrays
Mfr ON Semiconductor
Series -
Package Tape & Reel (TR)
Diode Configuration 1 Pair Common Anode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 20 V
Current - Average Rectified (Io) (per Diode) 10mA (DC)
Voltage - Forward (Vf) (Max) @ If 370 mV @ 1 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 1 µA @ 20 V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number NSVMMBD717
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Standard Package 3,000 pcs
Win Source Part Number 1383070-NSVMMBD717LT1G
Ultra Librarian 3D Model Ultra Librarian NSVMMBD717LT1G CAD Model

Description

ON Semiconductor NSVMMBD717LT1G - Dual Common Anode Schottky Barrier Diode

The NSVMMBD717LT1G from ON Semiconductor is a high-performance, dual common anode Schottky barrier diode designed for applications requiring fast switching and low power loss. This diode is housed in a compact SOT-23 package, making it an ideal choice for space-constrained applications. It features a low forward voltage drop and fast switching speed, which enhances the overall efficiency of the system in which it is used.

Key Features

  • Low Forward Voltage Drop: The device boasts a low forward voltage drop, which translates into reduced power loss and improved system efficiency, especially in low-voltage applications.
  • Fast Switching Speed: With its quick response time, the NSVMMBD717LT1G is suitable for high-frequency operations, making it a perfect fit for switch-mode power supplies, DC-DC converters, and other power management tasks.
  • Dual Diode Configuration: The common anode configuration allows for the simplification of PCB layout and can be advantageous in applications requiring a shared anode connection, such as full-wave rectification.
  • Power Dissipation: It is capable of handling power dissipation of up to 225 mW, ensuring reliable performance in a variety of circuits.
  • Temperature Range: The operating junction temperature range of -55°C to +150°C ensures stability and reliability across a wide range of environmental conditions.
  • RoHS Compliant: As an ON Semiconductor product, it is RoHS compliant, which means it meets the environmental standards by restricting the use of certain hazardous substances.

Applications

The NSVMMBD717LT1G is versatile and can be used in a wide array of electronic circuits. Some of its typical applications include:

  • Power Management Systems
  • DC-DC Converters
  • Switch-mode Power Supplies (SMPS)
  • Reverse Battery Protection
  • Portable Devices
  • Automotive Circuits
  • Full-Wave Bridge Rectification

With its robust design and efficient performance, the NSVMMBD717LT1G from ON Semiconductor is an excellent choice for designers looking to enhance the reliability and efficiency of their electronic systems.

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