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Same model may have multiple batches, images only for reference.
IRFP9140N Real Image
Same model may have multiple batches, images only for reference.

IRFP9140N

Part No IRFP9140N
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) | MOSFET P-CH 100V 23A TO-247AC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 23A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 117mOhm at 13A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 97nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 140W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-247AC
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1187810-IRFP9140N
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP9140N CAD Model

Description

The Infineon Technologies IRFP9140N is a P-channel power MOSFET designed for use in a variety of applications, including discrete semiconductor products.

  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 23A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 117mOhm @ 13A, 10V
  • Gate-Source Voltage(th) (Maximum): 4V @ 250μA
  • Gate Charge (Qg) (Maximum): 97nC @ 10V
  • Availability: Obsolete
  • Packaging: Bulk

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