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NGTB40N60L2WG

Part No NGTB40N60L2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH/FS 600V 80A TO247  /  IGBT Trench Field Stop 600 V 80 A 417 W Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2.61V @ 15V, 40A
Power - Max 417 W
Switching Energy 1.17mJ (on), 280µJ (off)
Input Type Standard
Gate Charge 228 nC
Td (on/off) @ 25°C 98ns/213ns
Test Condition 400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr) 73 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NGTB40N60L2WGOS,2156-NGTB40N60L2WG-OS,ONSONSNGTB40N60L2WG,2832-NGTB40N60L2WG-488,2832-NGTB40N60L2WG
Standard Package 30
Win Source Part Number 1082082-NGTB40N60L2WG
Ultra Librarian 3D Model Ultra Librarian NGTB40N60L2WG CAD Model

Description

Introducing the NGTB40N60L2WG IGBT from ON Semiconductor

The NGTB40N60L2WG is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This IGBT is engineered to provide high-efficiency and fast-switching capabilities in a wide range of applications, including motor drives, power inverters, and power management systems.

Featuring a robust and durable design, the NGTB40N60L2WG offers an optimal balance between conduction and switching losses, making it a perfect choice for high-performance power conversion systems. The device is characterized by a collector-emitter voltage (V<sub>CE) of 600V and a continuous collector current (I<sub>C) rating of 40A at 25°C, ensuring reliable operation even under demanding conditions.

Key Features:

  • High Efficiency: With a low on-state voltage drop and minimized tail current, the NGTB40N60L2WG provides excellent thermal performance and efficiency.
  • Fast Switching: The device's fast-switching capability enhances performance in high-frequency applications, reducing energy losses and improving overall system efficiency.
  • Co-Packaged Free Wheeling Diode: The inclusion of a soft recovery anti-parallel diode offers improved switching performance and reduced electromagnetic interference (EMI).
  • Robustness: The IGBT's rugged design ensures stability and long-term reliability, even in harsh operating conditions.
  • Enhanced Thermal Characteristics: With an improved maximum junction temperature of 175°C, the NGTB40N60L2WG can handle higher thermal and power densities.

Applications:

The NGTB40N60L2WG is versatile and can be used in various high-power applications, such as:

  • AC and DC motor drives
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) circuits
  • Solar inverters
  • Induction heating
  • Welding equipment

ON Semiconductor's commitment to quality ensures that the NGTB40N60L2WG IGBT delivers consistent performance and meets the stringent requirements of modern power electronic systems. With its advanced features and reliable operation, this IGBT is an excellent choice for designers looking to enhance the efficiency and robustness of their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $4.2437 $67.8992
38+ $3.4821 $132.3198
58+ $3.3732 $195.6456
80+ $3.2645 $261.1600
103+ $3.1556 $325.0268
138+ $2.8291 $390.4158
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Availability: 2,742 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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