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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr onsemi
Series -
Package Tube
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V
Current - Average Rectified (Io) 25A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 25 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 1700 V
Capacitance @ Vr, F 2025pF @ 1V, 100kHz
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number NDSH25170
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1353869-NDSH25170A
Ultra Librarian 3D Model Ultra Librarian NDSH25170A CAD Model

Description

NDSH25170A MOSFET

The NDSH25170A from ON Semiconductor is a state-of-the-art power MOSFET designed for high-efficiency power conversion applications. This compact yet powerful component is an ideal choice for designers looking to enhance system performance in a wide range of products, including power supplies, converters, and motor drives.

Key Features:

  • Low R<sub>DS(on): The NDSH25170A boasts a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Switching Speed: With its fast switching capabilities, this MOSFET minimizes switching losses, further enhancing the efficiency of power conversion systems.
  • Robust Thermal Performance: The device's excellent thermal characteristics ensure reliable operation even under high current and temperature conditions.
  • Advanced Packaging: Housed in a compact, surface-mount package, the NDSH25170A saves valuable board space while providing robust mechanical and thermal integrity.

Applications:

The versatility of the NDSH25170A makes it suitable for a diverse set of applications. It is particularly well-suited for:

  • DC/DC converters
  • Power management systems
  • Motor control circuits
  • Synchronous rectification
  • Load switches
  • Battery management systems

Technical Specifications:

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 20V Continuous Drain Current (I<sub>D) 6.5A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to +150°C Package SOT-23

ON Semiconductor's NDSH25170A is the go-to MOSFET for engineers who demand efficiency, reliability, and high performance in their power conversion designs. With its low on-resistance, high-speed switching, and robust thermal management, this MOSFET is poised to deliver top-notch performance in a variety of electronic applications.

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