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NDS9942

Part No NDS9942
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET N+P 20V 2.5A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel (TR)Cut Tape (CT)
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A, 2.5A
Rds On (Max) @ Id, Vgs 125mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 525pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NDS994
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 850177-NDS9942
Ultra Librarian 3D Model Ultra Librarian NDS9942 CAD Model

Description

The NDS9942 from ON Semiconductor is a high-performance, dual P-Channel enhancement mode Field Effect Transistor (MOSFET) that is designed for power management applications. This semiconductor device features two MOSFETs in a single package, which not only saves space but also simplifies the design and manufacturing process of electronic circuits.

The NDS9942 is fabricated with high cell density and DMOS technology, which significantly reduces the on-resistance (RDS(on)) and delivers superior switching performance. This makes it an ideal choice for a variety of applications, including load switch circuits, power management in portable and battery-powered devices, and other applications that require high efficiency and low voltage operation.

Key Features:

  • Low On-Resistance: The device boasts a low RDS(on), which enhances its efficiency and reduces power losses during operation.
  • High-Speed Switching: Its fast switching capabilities make it suitable for high-frequency applications, providing improved performance in power conversion and regulation circuits.
  • Dual MOSFET Configuration: Integrating two P-Channel MOSFETs in one package allows for compact designs and simplifies circuit complexity.
  • Voltage Rating: It operates at a drain-source voltage (VDSS) of -30V, making it suitable for a wide range of applications.
  • Continuous Drain Current: The device can handle a continuous drain current (ID) of -3.7A, providing sufficient current for most low to medium power applications.
  • Power Dissipation: With a power dissipation of 2.5W, it can efficiently handle the thermal requirements of most circuits.
  • Temperature Range: The NDS9942 can operate within a temperature range of -55°C to 150°C, ensuring reliability across various environmental conditions.

The NDS9942 is available in a compact SOIC-8 package, which is ideal for space-constrained applications. Its lead-free and RoHS-compliant design also ensures that it meets current environmental standards for electronic components. With its combination of efficiency, performance, and compact size, the NDS9942 from ON Semiconductor is a versatile choice for designers looking to enhance their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,840 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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