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NDH8304P

Part No NDH8304P
Manufacturer ON Semiconductor
Catalog HOT - SALES and EOL Components
Description Dual P-Channel Enhancement Mode Field Effect Transistor | MOSFET 2P-CH 20V 2.7A SSOT8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 2.7A
Rds On (Maximum) at Id, Vgs 70mOhm at 2.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 23nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 865pF at 10V
Maximum Power 800mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-LSOP (0.130", 3.30mm Width)
Supplier Device Package SuperSOT-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 060143-NDH8304P
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDH8304P CAD Model

Description

The NDH8304P is a cutting-edge P-Channel MOSFET brought to you by ON Semiconductor, a company renowned for its high-quality and reliable semiconductor components. This MOSFET is designed to deliver efficient power management and control within a wide range of electronic applications. With its compact footprint and robust design, the NDH8304P is particularly suitable for portable and space-constrained applications.

Key Features

  • High Current Capacity: The NDH8304P is capable of handling a continuous drain current of up to -6.7 A, making it ideal for high-performance applications.
  • Low On-Resistance: With a typical on-resistance of just 28 mOhms at VGS = -10 V, this MOSFET ensures minimal power loss and improved efficiency in your circuit designs.
  • Advanced Gate Charge: The device features a low gate charge, which facilitates faster switching speeds, reducing switching losses and enhancing overall performance.
  • Thermal Management: Constructed with a power dissipation of 2.5 W, the NDH8304P is designed to maintain stability and reliability even under high temperature operating conditions.
  • Logic Level Gate Drive: It can be driven by logic-level voltages, making it compatible with modern microcontrollers and digital ICs without the need for additional level-shifting components.

Applications

The NDH8304P is versatile and can be used in a variety of applications, including:

  • Power Management for Portable Devices
  • DC/DC Converters
  • Load Switching
  • Battery Management Systems
  • Motor Control Circuits

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) -30 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) -6.7 A
Power Dissipation (PD) 2.5 W
Operating Temperature Range -55°C to +150°C

Overall, the NDH8304P from ON Semiconductor exemplifies a high-performance and reliable component suitable for sophisticated electronic designs that demand energy efficiency and compactness without compromising on power handling capabilities.

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