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NDD60N900U1-1G

Part No NDD60N900U1-1G
Manufacturer ON Semiconductor
Catalog FETs - Single
Description N-Channel Power MOSFET | MOSFET N-CH 600V 5.9A IPAK-4
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 5.7A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 900mOhm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 360pF at 50V
Power Dissipation (Maximum) 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 3 (168 Hours)
Win Source Part Number 755320-NDD60N900U1-1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NDD60N900U1-1G CAD Model

Description

The NDD60N900U1-1G is a state-of-the-art power MOSFET brought to you by ON Semiconductor, a leader in innovative energy-efficient semiconductor solutions. Designed for high-performance applications, this MOSFET is ideal for a wide range of power management tasks. With its robust construction and cutting-edge technology, the NDD60N900U1-1G offers superior efficiency and reliability.

Key Features

  • High Voltage Capability: This MOSFET is capable of handling high voltages, making it perfect for demanding applications.
  • Low On-Resistance: The low RDS(on) ensures minimal power loss and heat generation, improving the overall efficiency of the system.
  • High-Speed Switching: Designed to switch at high frequencies, the NDD60N900U1-1G allows for efficient power conversion in modern electronic circuits.
  • Rugged Design: The device is built to withstand harsh conditions, ensuring long-term stability and performance.

Applications

The versatility of the NDD60N900U1-1G makes it suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • Motor Drives
  • DC-DC Converters
  • Automotive Applications

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability. The NDD60N900U1-1G undergoes rigorous testing and quality control measures to ensure it meets the stringent requirements of industrial and automotive applications. Customers can rely on this MOSFET for consistent performance and durability.

Environmental Compliance

In line with ON Semiconductor's dedication to environmental stewardship, the NDD60N900U1-1G is designed to comply with international environmental standards. It is RoHS compliant, minimizing the environmental impact by restricting the use of certain hazardous substances in its construction.

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