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NCP81071DDR2G

Part No NCP81071DDR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description NCP81071 - DUAL 5 LOW -SIDE DRIV / Gate Driver IC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Power Management (PMIC)>Gate Drivers
Mfr ON Semiconductor
Series *
Package Bulk
Base Product Number NCP81071
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Unaffected
Standard Package 419 pcs
Win Source Part Number 1383019-NCP81071DDR2G
Ultra Librarian 3D Model Ultra Librarian NCP81071DDR2G CAD Model

Description

Introducing the NCP81071DDR2G from ON Semiconductor

The NCP81071DDR2G is a state-of-the-art gate driver designed by ON Semiconductor, a leader in energy-efficient innovations. This product is specifically tailored for high-performance applications that require precise and efficient gate control. The NCP81071DDR2G is an optimal solution for driving N-channel MOSFETs and IGBTs that are commonly used in a wide range of power conversion technologies.

At the heart of the NCP81071DDR2G is its dual-channel configuration, which allows for independent gate driving with an impressive propagation delay of typically 25 ns. This ensures synchronous operation of the channels, which is critical for applications demanding high-speed switching and accurate timing control. The driver is capable of providing a robust gate drive with sourcing and sinking current capabilities of up to 4 A, ensuring that the MOSFETs or IGBTs are driven effectively for optimal performance.

One of the key features of the NCP81071DDR2G is its integrated bootstrap diode, which simplifies the circuit design and reduces external component count. This built-in diode is essential for creating the high-side drive voltage needed in half-bridge configurations, thus enhancing the efficiency and reliability of the overall system.

The device also offers protection features that are crucial for maintaining the integrity of the power system. These include under-voltage lockout (UVLO) for both the high-side and low-side channels, which ensures that the gate driver operates only when there is sufficient voltage. Additionally, the NCP81071DDR2G includes over-current protection (OCP) to safeguard the power devices from excessive current conditions.

With its wide operating voltage range from 10 V to 20 V, the NCP81071DDR2G is versatile and can be used in various applications, including switch-mode power supplies, DC-DC converters, motor drives, and power inverters. Its compact size, in a small outline package, makes it suitable for space-constrained applications while still delivering the high performance expected from ON Semiconductor products.

Overall, the NCP81071DDR2G is a robust, efficient, and reliable gate driver that provides the control and protection necessary for high-efficiency power management solutions. Its features and performance make it a valuable component in any power electronics engineer's toolkit.

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