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NCP81071AMNTXG

Part No NCP81071AMNTXG
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC GATE DRVR LOW-SIDE 8WDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Programmable Not Verified
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 4.5V ~ 20V
Logic Voltage - VIL, VIH 1.2V, 1.8V
Current - Peak Output (Source, Sink) 5A, 5A
Input Type Inverting
Rise / Fall Time (Typ) 8ns, 8ns
Temperature Range - Operating -40°C ~ 140°C (TJ)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WDFN (3x3)
Base Product Number NCP81071
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 887039-NCP81071AMNTXG
Ultra Librarian 3D Model Ultra Librarian NCP81071AMNTXG CAD Model

Description

ON Semiconductor NCP81071AMNTXG Dual MOSFET Driver

The ON Semiconductor NCP81071AMNTXG is a high-performance, dual MOSFET driver designed to efficiently manage power in a wide range of applications. This compact, yet powerful integrated circuit (IC) is ideal for driving both the high-side and the low-side N-channel power MOSFETs commonly used in synchronous buck or half-bridge configurations.

With its advanced features, the NCP81071AMNTXG ensures reliable and efficient operation. The driver boasts a robust 4.5V to 18V operating range, making it versatile for various power systems. The high peak drive current capability of up to 4A for the high-side and 4A for the low-side ensures that MOSFETs are turned on and off rapidly, reducing switching losses and improving overall system efficiency.

The IC incorporates adaptive dead-time control, which optimizes the time interval between the turn-off of one MOSFET and the turn-on of the other. This feature minimizes cross-conduction and shoot-through currents, further enhancing the efficiency and reliability of the power stage. Moreover, the NCP81071AMNTXG includes an independent high-side and low-side under-voltage lockout (UVLO) protection that ensures the MOSFETs operate only when sufficient gate drive voltage is present.

Designed with ease of use in mind, the NCP81071AMNTXG comes in a compact 3x3mm 10-pin DFN package, which is suitable for space-constrained applications without compromising performance. In addition, the integrated bootstrap diode for the high-side drive reduces external component count, simplifying the design and reducing the overall solution footprint.

ON Semiconductor's NCP81071AMNTXG is an excellent choice for designers looking to enhance the performance of their power management systems. Its robust feature set ensures that it can meet the demands of a variety of applications, including computing, telecommunications, and industrial power systems. Whether you are designing a new system or upgrading an existing one, the NCP81071AMNTXG offers the efficiency, reliability, and performance required for today's high-performance power solutions.

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