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NCP5359MNR2G

Part No NCP5359MNR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC GATE DRIVER VR11.1/AMD 10DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 10 V to 13.2 V
Logic Voltage - VIL, VIH 1V, 2V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 35V
Rise and Fall Time 16ns, 11ns
Temperature Range - Operating 0°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-DFN (3x3)
Win Source Part Number 1082242-NCP5359MNR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NCP5359MNR2G CAD Model

Description

The NCP5359MNR2G is a high-performance, dual MOSFET driver designed by ON Semiconductor, tailored for efficiently driving the gates of both high-side and low-side power MOSFETs. This integrated circuit is specifically engineered to accommodate the stringent requirements of fast-switching applications, making it an ideal choice for a wide range of power conversion technologies.

Key Features

  • High Peak Output Drive Current: With its robust peak output current of up to 2A, the NCP5359MNR2G can easily drive large capacitance MOSFETs, ensuring quick and efficient switching performance.
  • Adaptive Dead Time Control: This feature minimizes cross-conduction and power loss by automatically adjusting the timing between the high-side and low-side drives.
  • High Switching Frequency: The device supports switching frequencies up to 1 MHz, making it suitable for high-frequency power conversion systems such as those found in modern computing and telecommunications equipment.
  • Independent Inputs: Separate inputs for the high-side and low-side drivers provide design flexibility and simplify the implementation of complex control schemes.
  • Under-Voltage Lockout (UVLO): The NCP5359MNR2G is equipped with UVLO protection to ensure the device operates only when the supply voltage is sufficient, thereby protecting the MOSFETs and the driver itself from undervoltage conditions.
  • Thermal Shutdown: An integrated thermal shutdown feature protects the device from overheating, enhancing system reliability and longevity.

Applications

The versatility of the NCP5359MNR2G makes it a perfect choice for a variety of applications, including:

  • Synchronous Buck Converters
  • Half-Bridge and Full-Bridge Converters
  • Multi-Phase Power Supplies
  • DC-DC Converters for Computing and Server Applications
  • Telecommunications Power Systems

Package and Availability

The NCP5359MNR2G comes in a compact 10-pin DFN package (3x3 mm), which is ideal for space-constrained applications. Its surface-mount design allows for efficient assembly and integration into various circuit boards. ON Semiconductor ensures availability and support for the NCP5359MNR2G, providing detailed datasheets and technical assistance to facilitate design-in processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4605 $59.8650
310+ $0.3779 $117.1490
475+ $0.3661 $173.8975
655+ $0.3543 $232.0665
845+ $0.3425 $289.4125
1,130+ $0.3070 $346.9100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,520 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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