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NCP5181DR2G

Part No NCP5181DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC MOSFET DRVR HIGH VOLT 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 10 V to 20 V
Logic Voltage - VIL, VIH 0.8V, 2.3V
Current - Peak Output (Source, Sink) 1.4A, 2.2A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise and Fall Time 40ns, 20ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 025065-NCP5181DR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NCP5181DR2G CAD Model

Description

ON Semiconductor NCP5181DR2G High Voltage MOSFET Driver

The NCP5181DR2G from ON Semiconductor is a high-performance, high-speed MOSFET driver designed to drive N-channel power MOSFETs in a variety of applications. This device is particularly suitable for high-efficiency converters and power management solutions where high voltage and fast switching are required. It is an excellent choice for use in half-bridge and full-bridge topologies, as well as in synchronous rectification circuits.

The NCP5181DR2G driver operates with a supply voltage range from 10V to 20V, which allows for flexible design options. It provides a robust output drive capability of up to 2A in peak current, ensuring that the connected MOSFETs can be turned on and off efficiently and with minimal delay. This results in improved overall system performance and reduced power losses.

The driver features a high voltage level shifting circuit that can handle up to 600V, which is critical in applications dealing with high voltage rails. This level shifting capability ensures that the driver can operate reliably even under extreme voltage conditions, making it suitable for industrial and telecommunications power systems, as well as in automotive and consumer electronics that require high voltage operations.

ON Semiconductor has incorporated several protection features into the NCP5181DR2G to enhance system reliability. These include an under-voltage lockout (UVLO) that prevents the driver from operating at insufficient voltages and a cross-conduction prevention logic that reduces the risk of shoot-through currents, which can be harmful to the MOSFETs and the overall system.

The NCP5181DR2G comes in a compact SOIC-8 package, which is space-efficient and suitable for high-density PCB layouts. Its small footprint does not compromise its performance and allows for the design of compact and efficient power converters.

With its combination of high voltage capability, robust drive strength, and protective features, the ON Semiconductor NCP5181DR2G MOSFET driver is an ideal component for engineers looking to design reliable, high-performance power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3381 $53.5240
95+ $1.0979 $104.3005
145+ $1.0636 $154.2220
195+ $1.0293 $200.7135
255+ $0.9950 $253.7250
340+ $0.8921 $303.3140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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