ON Semiconductor NCP51705MNTXG SiC MOSFET Driver

The NCP51705MNTXG from ON Semiconductor is a high-performance, gate driver specifically designed to drive Silicon Carbide (SiC) MOSFETs. This driver is ideal for applications that demand high efficiency and reliability, such as electric vehicles, industrial power supplies, and renewable energy systems.

The device is capable of providing a peak current of up to 6A, ensuring that the SiC MOSFETs can be driven quickly and efficiently, minimizing switching losses and improving overall system performance. The NCP51705MNTXG operates over a wide supply voltage range from -5V to 35V, which provides design flexibility and compatibility with a range of SiC MOSFETs.

One of the key features of the NCP51705MNTXG is its negative gate voltage capability, which enhances the robustness of the SiC MOSFET by preventing unintended turn-on due to Miller capacitance during high dv/dt events. Additionally, the driver includes an under-voltage lockout (UVLO) feature for both high side and low side to ensure the device operates only when the supply voltage is within the specified range, thereby safeguarding the MOSFETs from damage.

The NCP51705MNTXG also boasts a split output that allows the user to adjust the turn-on and turn-off speed to optimize the electromagnetic interference (EMI) performance of the application. This feature is particularly beneficial in reducing noise in sensitive environments.

For enhanced protection, the driver includes a desaturation detection feature that turns off the MOSFET when a short circuit is detected, thus providing overcurrent protection. Moreover, the NCP51705MNTXG is designed with a robust isolation technology, offering a high isolation voltage to ensure safe operation even in high-voltage applications.

This driver comes in a compact, surface-mount 8-pin WDFN package, making it suitable for space-constrained applications. The NCP51705MNTXG is a testament to ON Semiconductor's commitment to providing advanced solutions for driving the next generation of power semiconductors.