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NCP51561BADWR2G

Part No NCP51561BADWR2G
Manufacturer ON Semiconductor
Catalog Isolators - Gate Drivers
Description HIGH PERFORMANCE ISOLATED DUAL C
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Isolators - Isolators - Gate Drivers
Mfr onsemi
Series -
Package Tape & Reel (TR)
Product Status Active
Technology Capacitive Coupling
Number of Channels 2
Voltage - Isolation 5000Vrms
Common Mode Transient Immunity (Min) 200V/ns
Propagation Delay tpLH / tpHL (Max) 58ns, 58ns
Pulse Width Distortion (Max) 5ns
Rise / Fall Time (Typ) 11ns, 10ns
Current - Output High, Low 9A, 4.5A
Current - Peak Output 4.5A, 9A
Voltage - Forward (Vf) (Typ) -
Voltage - Output Supply 18.5V ~ 30V
Temperature Range - Operating -40°C ~ 125°C
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Approval Agency CQC, UL, VDE
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1372557-NCP51561BADWR2G
Ultra Librarian 3D Model Ultra Librarian NCP51561BADWR2G CAD Model

Description

The NCP51561BADWR2G is a high-performance, dual-channel IGBT gate driver designed by ON Semiconductor, tailored for advanced and efficient power management solutions. This device is well-suited for applications such as motor drives, power inverters, and power supply systems where precise and reliable gate control of IGBTs or power MOSFETs is crucial.

Featuring a wide supply voltage range from 15V to 30V, the NCP51561BADWR2G provides a robust and flexible platform for various design requirements. Its high peak current capability ensures fast and efficient switching, which is essential for reducing power losses and improving the overall efficiency of the power system.

The device boasts a high common-mode transient immunity (CMTI) of 50 kV/µs, which guarantees stable operation in noisy environments where electrical interference is a concern. This high CMTI minimizes the risk of faulty switching events, thus enhancing the reliability and longevity of the application it serves.

With its integrated under-voltage lockout (UVLO) protection, the NCP51561BADWR2G ensures that the gate driver operates only when the supply voltage is within an acceptable range. This protective feature safeguards the IGBTs or MOSFETs from insufficient gate voltage, which could otherwise lead to incomplete switching and potential device damage.

The NCP51561BADWR2G gate driver also includes a separate logic ground and power ground, which helps to minimize noise coupling between the control circuit and the power stage. This separation contributes to better signal integrity and improved system performance.

ON Semiconductor's commitment to quality and reliability is evident in the NCP51561BADWR2G, which is available in a compact SOIC-16 package. Its design ensures that it meets the stringent demands of modern power electronic systems, making it a reliable choice for designers looking to optimize their power management strategies.

In conclusion, the NCP51561BADWR2G from ON Semiconductor is a sophisticated and reliable gate driver solution that delivers high performance, protection features, and noise immunity, ensuring efficient and safe operation in a wide array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.0437 $64.3496
18+ $6.6001 $118.8018
28+ $6.3938 $179.0264
38+ $6.1875 $235.1250
49+ $5.9813 $293.0837
65+ $5.3624 $348.5560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 231 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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