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NCD57080CDR2G

Part No NCD57080CDR2G
Manufacturer ON Semiconductor
Catalog Isolators - Gate Drivers
Description ISOLATED HIGH CURRENT GATE DRIVE / 8A Gate Driver Capacitive Coupling 3750Vrms 1 Channel 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Category Isolators>Isolators - Gate Drivers
Manufacturer onsemi
Packaging Reel - TR
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 3750Vrms
Common Mode Transient Immunity (Min) 100kV/µs
Propagation Delay tpLH / tpHL (Max) 85ns, 85ns
Rise / Fall Time (Typ) 13ns, 13ns
Current - Output High, Low 8A, 8A
Current - Peak Output 8A
Voltage - Output Supply 0V ~ 32V
Temperature Range - Operating -40°C ~ 125°C
Mounting Surface Mount
Case / Package 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number NCD57080
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.49.8000
Other Part Number 488-NCD57080CDR2GCT,488-NCD57080CDR2GTR,488-NCD57080CDR2GDKR
Standard Package 2,500
Win Source Part Number 1323577-NCD57080CDR2G
Ultra Librarian 3D Model Ultra Librarian NCD57080CDR2G CAD Model

Description

ON Semiconductor NCD57080CDR2G Overview

The NCD57080CDR2G is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed and manufactured by ON Semiconductor, a leading provider of semiconductor solutions. This IGBT module is engineered to deliver efficient and reliable performance for a wide range of power applications, including motor drives, power inverters, and power management systems.

Key Features

  • High Current Rating: The NCD57080CDR2G is capable of handling significant current, making it suitable for high-power applications.
  • Low On-State Voltage: This IGBT module offers a low VCE(sat) (collector-emitter saturation voltage), which translates to reduced power dissipation and improved efficiency.
  • Fast Switching Performance: With its fast switching capabilities, the NCD57080CDR2G minimizes switching losses and enhances performance in high-frequency circuits.
  • High Input Impedance: The high input impedance ensures minimal gate drive power is required, which helps in reducing the overall system power consumption.
  • Robust Construction: Designed to withstand harsh conditions, the NCD57080CDR2G is built with a rugged package that enhances its durability and longevity.

Applications

  • AC and DC Motor Drives
  • Renewable Energy Inverters
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) Circuits
  • Induction Heating Systems

Technical Specifications

The NCD57080CDR2G boasts impressive technical specifications that make it a versatile choice for power electronic designers. It operates at a continuous collector current of up to 80A with a collector-emitter voltage rating of 600V. The low on-state voltage helps to reduce conduction losses, while the fast switching speed improves overall system efficiency.

ON Semiconductor's commitment to quality and reliability is evident in the NCD57080CDR2G, which is designed to meet the stringent requirements of various industrial and commercial applications. With its combination of high performance, efficiency, and robustness, the NCD57080CDR2G is an excellent choice for those seeking a reliable IGBT solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7536 $52.6080
70+ $1.4389 $100.7230
110+ $1.3939 $153.3290
150+ $1.3490 $202.3500
195+ $1.3040 $254.2800
260+ $1.1691 $303.9660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,738 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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